High-resistivity silicon p-i-n diodes for detection of ionising radiation

ASDAM 2000 - Conference Proceedings: 3rd International EuroConference on Advanced Semiconductor Devices and Microsystems

Volumn , Issue , 2000, Pages 461-464

  Slysz W ^a   Ryc L ^b   Wegrzecki M ^a  

^a ukasiewicz Research Network Institute of Microelectronics and Photonics   (Poland)

^b SOLTAN INSTITUTE FOR NUCLEAR STUDIES   (Poland)

Author keywords

[No Author keywords available]

Indexed keywords

IONIZING RADIATION; LASER PRODUCED PLASMAS; MICROSYSTEMS; PHOTODIODES; PLASMA INTERACTIONS; SILICON;

A-PARTICLES; ACTIVE LAYER; BORON DOPED SILICON LAYERS; HIGH RESISTIVITY SILICON; LARGE SURFACES; LASER PLASMA; NUCLEAR RADIATIONS; PIN PHOTODIODE;

SEMICONDUCTOR DEVICES;

EID: 33645963544     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ASDAM.2000.889545     Document Type: Conference Paper

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