Study of electrical transport and magnetic properties in CaMn1-xCuxO3

Materials Science and Engineering: B

Volumn 129, Issue 1-3, 2006, Pages 54-58

  Kar, Manoranjan ^a   Borah, S M ^a   Ravi, S ^a  

^a INDIAN INSTITUTE OF TECHNOLOGY GUWAHATI   (India)

Author keywords

Copper; Electrical measurements; Exchange interactions; Manganese; Oxides

Indexed keywords

COPPER; MAGNETIC PROPERTIES; MANGANESE; OXIDES; TRANSPORT PROPERTIES;

ANTIFERROMAGNETIC INTERACTIONS; COULOMB INTERACTION; ELECTRICAL MEASUREMENTS; EXCHANGE INTERACTIONS;

ELECTRICAL ENGINEERING;

EID: 33645913841     PISSN: 09215107     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mseb.2005.12.034     Document Type: Article

References (33)

1. von Helmolt R., Wecker J., Holzapfel B., Scultz L., and Samwer K. Phys. Rev. Lett. 71 (1993) 2331
2. Mahesh R., Mahendiran R., Raychudhuri A.K., and Rao C.N.R. J. Solid State Chem. 114 (1995) 297
3. In: Rao C.N.R., and Raveau B. (Eds). Colossal Magneto-Resistance, Charge Ordering and Related Properties of Manganese oxides (1998), World Scientific, Singapore
4. Yuan S.L., Jiang Y., Zeng X.Y., Zhao W.Y., Yang Y.P., Qian J.P., Zhang G.Q., Tu F., and Tang C.Q. Phys. Rev. B 62 (2000) 11347
5. Kar M., Ravi S., and Pramana. J. Phys. 58 (2002) 1019
6. Raveau B., Martin C., Maignan A., and Hervieu M. J. Phys. Condens. Matter 14 (2002) 1297
7. Wollan E.O., and Koehler W.C. Phys. Rev. 100 (1955) 545
8. Jonker G.H. Physica 22 (1956) 707
9. Taguchi H. Phys. Status Sol. (a) 88 (1985) K79
10. Melo Jorge M.E., Correia dos Santos A., and Nunes M.R. Int. J. Inorg. Mater. 3 (2001) 915
11. Briatico J., Alascio B., Allub R., Butera A., Caneiro A., Causa M.T., and Tovar M. Phys. Rev. B 53 (1996) 14020
12. Troyanchuk I.O., Samsonenko N.V., Szymczak H., and Nabialek A. J. Solid State Chem. 131 (1997) 144
13. Maignan A., Martin C., Damay F., Raveau B., and Hejtmanek J. Phys. Rev. B 58 (1998) 2758
14. Zeng Z., Greenblatt M., and Croft M. Phys. Rev. B 59 (1999) 8784
15. Neumeier J.J., and Cohn J.L. Phys. Rev. B 61 (2000) 14319
16. Zener C. Phys. Rev. 82 (1951) 403
17. von Helmolt L., Haupt K., Bärner U., and Sondermann. Solid State Commun. 82 (1992) 693
18. Yuan S.L., Jiang Y., Li G., Li J.G., Yang Y.P., Zeng X.Y., Tang P., and Huang Z. Phys. Rev. B 61 (2000) 3211
19. Pi L., Zheng L., and Zhang Y. Phys. Rev. B 61 (2000) 8917
20. Wang K.Y., Song W.H., Dai J.M., Ye S.L., Wang S.G., Fang J., Chen J.Z., Gao B.J., Du J.J., and Sun Y.P. J. Appl. Phys. 90 (2001) 6263
21. Ghosh K., Ogale S.B., Ramesh R., Greene R.L., Venkatesan T., Gapchup K.M., Bathe R., and Patil S.I. Phys. Rev. B 59 (1999) 533
22. Siegrist T., Zahurak S.M., Murphy D.W., and Roth R.S. Nature 334 (1988) 231
23. Liu G.D., Che G.C., Zhao Z.X., Jia S.L., Guo S.Q., Zhang Y.Z., Chen H., Wu F., and Dong C. J. Phys. Condens. Matter 10 (1998) 8477
24. Young R.A. The Rietveld Method International Union of Crystallography (1996), Oxford University Press, New York
25. Chiba H., Kikuchi M., Kusaba K., Muraoka Y., and Syono Y. Solid State Commun. 99 (1996) 499
26. Hennion B., Hicks T.J., Sidis Y., and Mirebeau I. J. Magn. Magn. Mater. 226-230 (2001) 512
27. Mott N.F. Metal-Insulator Transitions (1990), Taylor & Francis, London p. 51
28. Efros A.L., and Shklovskii B.I. J. Phys. C 8 (1975) L49
29. Mott N.F., and Davis E.A. Electronics Process in Noncrystalline Materials (1971), Clarendon, Oxford
30. Viret M., Ranno L., and Coey J.M.D. Phys. Rev. B 55 (1997) 8067
31. Banerjee A., Pal S., and Chaudhuri B.K. J. Chem. Phys. 115 (2001) 1550
32. Shklovskii B.I., and Efros A.L. Electronic Properties of Doped Semiconductors (1984), Springer, Berlin
33. Laiho R., Lisunov K.G., Lähderanta E., Petrenko P.A., Salminen J., Shakhov M.A., Safontchik M.O., Stamov V.S., Shubnikov M.V., and Zakhvalinskii V.S. J. Phys. Condens. Matter 14 (2002) 8043