First detection of gamma-ray peaks by an undoped InSb Schottky detector

Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment

Volumn 559, Issue 2, 2006, Pages 558-560

  Hishiki, Shigeomi ^a   Kogetsu, Yoshitaka ^a   Kanno, Ikuo ^a   Nakamura, Tatsuya ^b   Katagiri, Masaki ^b  

^a KYOTO UNIVERSITY   (Japan)

^b JAPAN ATOMIC ENERGY AGENCY   (Japan)

Author keywords

Compound semiconductor; Gamma ray detector; InSb

Indexed keywords

COMPUTER SIMULATION; DETECTORS; ENERGY GAP; INDIUM COMPOUNDS; MONTE CARLO METHODS; X RAYS;

COMPOUND SEMICONDUCTOR; GAMMA-RAY DETECTOR; INSB;

GAMMA RAYS;

EID: 33645882235     PISSN: 01689002     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.nima.2005.12.052     Document Type: Article

References (4)

1. Cohen M.L., and Chelikowsky J.R. Electronic Structure and Optical Properties of Semiconductors (1988), Springer, Berlin
2. Nakamura T., Katagiri M., Aratono Y., Kanno I., Hishiki S., Sugiura O., and Murase Y. Nucl. Instr. and Meth. A 520 (2004) 76
3. S. Hishiki, I. Kanno, O. Sugiura, R. Xiang, T. Nakamura, M. Katagiri, IEEE Trans. Nucl. Sci., in print.
4. Y. Namito, H. Hirayama, KEK Internal, 2000-4, 2000.