High gain effects for solid-state impact-ionization multipliers

IEEE Journal of Quantum Electronics

Volumn 42, Issue 5, 2006, Pages 471-476

  Lee, Hong Wei ^a   Beutler, Joshua L ^a   Hawkins, Aaron R ^a  

^a Department of Electrical and Computer Engineering   (United States)

Author keywords

Avalanche photodiode (APD); Electron multipliers; Impact ionization; Space charge

Indexed keywords

AMPLIFICATION; AVALANCHE DIODES; ELECTRIC SPACE CHARGE; IMPACT IONIZATION; PHOTOCURRENTS; SILICON; AVALANCHE PHOTODIODES; CASCADE CONTROL SYSTEMS; ELECTRON MULTIPLIERS; HETEROJUNCTION BIPOLAR TRANSISTORS; PARTICLE DETECTORS; PHOTODIODES;

AVALANCHE PHOTODIODE (APD); HIGH-SENSITIVITY ELECTRONIC DETECTION; HIGH-SENSITIVITY OPTICAL DETECTION; IMPACT-IONIZATION MULTIPLIERS;

PHOTOMULTIPLIERS; IMPACT IONIZATION;

AMPLIFYING DEVICES; AVALANCHE PHOTODIODE (APD); CASCADED STRUCTURE; CURRENT GAINS; CURRENT SOURCES; ELECTRONIC DETECTION; GAIN SATURATION; HIGH CURRENT GAIN; HIGH GAIN; HIGH-SENSITIVITY; IMPACT-IONIZATION MULTIPLIERS; LOW NOISE; OUTPUT SIGNAL; SILICON PHOTODIODE; SPACE CHARGE EFFECTS; SPACE CHARGES; THEORETICAL PREDICTION;

EID: 33645789108     PISSN: 00189197     EISSN: None     Source Type: Journal    
DOI: 10.1109/JQE.2006.873150     Document Type: Article

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