On the modeling and design of Schottky field-effect transistors

IEEE Transactions on Electron Devices

Volumn 53, Issue 4, 2006, Pages 866-874

  Vega, Reinaldo A ^a,b  

^a Kate Gleason College of Engineering   (United States)

^b Biophan Technologies Inc   (United States)

Author keywords

Airy function; Ambipolar; Metal source drain (S D); Nanotechnology; Schottky barrier (SB); Semiconductor device modeling; Tunneling model

Indexed keywords

ELECTRIC CURRENTS; ELECTRON TUNNELING; NANOTECHNOLOGY; SCHOTTKY BARRIER DIODES; SEMICONDUCTOR DEVICE MODELS; THRESHOLD VOLTAGE;

AIRY FUNCTION; METAL SOURCE/DRAIN; TUNNELING MODEL;

FIELD EFFECT TRANSISTORS;

EID: 33645751665     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2006.871176     Document Type: Article

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