Laser performance of Nd:LaB3O6 cleavage microchips passively Q-switched with a Cr4+:YAG saturable absorber

Applied Physics B: Lasers and Optics

Volumn 83, Issue 2, 2006, Pages 195-201

  Chen, Y J ^a   Gong, X H ^a   Lin, Y F ^a   Luo, Z D ^a   Tan, Q G ^a   Huang, Y D ^a  

^a FUJIAN INSTITUTE OF RESEARCH ON THE STRUCTURE OF MATTER   (China)

Author keywords

[No Author keywords available]

Indexed keywords

ADSORPTION; EXTRAPOLATION; MICROPROCESSOR CHIPS; OSCILLATIONS; THERMAL LOAD; WAVE TRANSMISSION;

AVERAGE OUTPUT POWERS; OUTPUT COUPLER TRANSMISSION; PLANO-CONCAVE CAVITY; Q-SWITCHED LASER OSCILLATION; SATURABLE ABSORBERS;

SEMICONDUCTOR LASERS;

EID: 33645725821     PISSN: 09462171     EISSN: None     Source Type: Journal    
DOI: 10.1007/s00340-006-2174-5     Document Type: Article

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