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Volumn 41, Issue 4, 2006, Pages 815-822

A low leakage SRAM macro with replica cell biasing scheme

Author keywords

Replica cell; Sleep mode; SRAM; Standby leakage

Indexed keywords

CLAMPING DEVICES; COMPUTER PERIPHERAL EQUIPMENT; LEAKAGE CURRENTS; OPTIMIZATION; VOLTAGE CONTROL;

EID: 33645679741     PISSN: 00189200     EISSN: None     Source Type: Journal    
DOI: 10.1109/JSSC.2006.870763     Document Type: Conference Paper
Times cited : (31)

References (7)
  • 1
    • 0029359285 scopus 로고
    • 1-V power supply high-speed digital circuit technology with multithreshold-voltage CMOS
    • Aug.
    • S. Mutoh et al., "1-V power supply high-speed digital circuit technology with multithreshold-voltage CMOS," IEEE J. Solid-State Circuits, vol. 30, no. 8, pp. 847-854, Aug. 1995.
    • (1995) IEEE J. Solid-state Circuits , vol.30 , Issue.8 , pp. 847-854
    • Mutoh, S.1
  • 3
    • 0030083516 scopus 로고    scopus 로고
    • A 1 v multi-threshold voltage CMOS DSP with an efficient power management technique for mobile phone application
    • Feb.
    • S. Mutoh et al., "A 1 V multi-threshold voltage CMOS DSP with an efficient power management technique for mobile phone application," in IEEE Int. Solid-State Circuits Conf. (ISSCC) Dig. Tech. Papers, Feb. 1996, pp. 168-169.
    • (1996) IEEE Int. Solid-state Circuits Conf. (ISSCC) Dig. Tech. Papers , pp. 168-169
    • Mutoh, S.1
  • 4
    • 0242468185 scopus 로고    scopus 로고
    • 16.7-fA/cell tunnel-leakage-suppressed 16-Mb SRAM for handling cosmic-ray-induced multierrors
    • Nov.
    • K. Osada et al., "16.7-fA/cell tunnel-leakage-suppressed 16-Mb SRAM for handling cosmic-ray-induced multierrors," IEEE J. Solid-State Circuits, vol. 38, no. 11, pp. 1952-1957, Nov. 2003.
    • (2003) IEEE J. Solid-state Circuits , vol.38 , Issue.11 , pp. 1952-1957
    • Osada, K.1
  • 5
    • 16544372853 scopus 로고    scopus 로고
    • A 90-nm low-power 32 KByte embedded SRAM with gate leakage suppression circuit for mobile applications
    • Apr.
    • K. Nii et al., "A 90-nm low-power 32 KByte embedded SRAM with gate leakage suppression circuit for mobile applications," IEEE J. Solid-State Circuits, vol. 39, no. 4, pp. 684-693, Apr. 2004.
    • (2004) IEEE J. Solid-state Circuits , vol.39 , Issue.4 , pp. 684-693
    • Nii, K.1
  • 6
    • 11944250195 scopus 로고    scopus 로고
    • A 300 MHz 25 μA/Mb-leakage on-chip SRAM module featuring process-variation immunity and low-leakage-active mode for mobile-phone application processor
    • Jan.
    • M. Yamaoka et al., "A 300 MHz 25 μA/Mb-leakage on-chip SRAM module featuring process-variation immunity and low-leakage-active mode for mobile-phone application processor," IEEE J. Solid-State Circuits, vol. 40, no. 1, pp. 186-194, Jan. 2005.
    • (2005) IEEE J. Solid-state Circuits , vol.40 , Issue.1 , pp. 186-194
    • Yamaoka, M.1
  • 7
    • 15844361963 scopus 로고    scopus 로고
    • A forward body-biased low-leakage SRAM cache: Device, circuit and architecture considerations
    • Mar.
    • C. H. Kim et al., "A forward body-biased low-leakage SRAM cache: device, circuit and architecture considerations," IEEE Trans. Very Large Scale Integmt. (VLSI) Syst., vol. 13, no. 3, pp. 349-357, Mar. 2005.
    • (2005) IEEE Trans. Very Large Scale Integmt. (VLSI) Syst. , vol.13 , Issue.3 , pp. 349-357
    • Kim, C.H.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.