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Volumn 99, Issue 6, 2006, Pages

Structure of Zn-Se-Te system with submonolayer insertion of ZnTe grown by migration enhanced epitaxy

Author keywords

[No Author keywords available]

Indexed keywords

REFLECTION MEASUREMENTS; STRUCTURAL PARAMETERS; SUBMONOLAYER THICKNESS; X-RAY REFLECTIVITY (XRR);

EID: 33645654268     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2184434     Document Type: Article
Times cited : (10)

References (31)
  • 4
    • 0027612353 scopus 로고
    • Migration enhanced epitaxy is a variant of conventional MBE, and it occurs when the growing surface is alternatively exposed to group II and group VI elements or to group III and group V elements. For a review, see, e.g., Y. Horikoshi, Semicond. Sci. Technol. 8, 1032 (1993).
    • (1993) Semicond. Sci. Technol. , vol.8 , pp. 1032
    • Horikoshi, Y.1
  • 18
    • 0345602068 scopus 로고    scopus 로고
    • J. Wu, et al. Phys. Rev. B 68, 033206 (2003).
    • (2003) Phys. Rev. B , vol.68 , pp. 033206
    • Wu, J.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.