Microcathodoluminescence and electrical properties of GaN epitaxial layers grown on thick freestanding GaN substrates

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 24, Issue 2, 2006, Pages 790-794

  Govorkov, A V ^a   Smirnov, N B ^a   Polyakov, A Y ^a   Markov, A V ^a   Voss, Lars ^b   Pearton, S J ^b  

^a INSTITUTE OF RARE METALS   (Russian Federation)

^b J Crayton Pruitt Family Department of Biomedical Engineering   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER LIFETIME; METAL ORGANIC CHEMICAL VAPOR DEPOSITION; MICROCATHODOLUMINESCENCE SPECTRA; SHALLOW DONORS;

ACTIVATION ENERGY; CAPACITANCE; CATHODOLUMINESCENCE; CHEMICAL VAPOR DEPOSITION; CRYSTAL GROWTH; DISLOCATIONS (CRYSTALS); ELECTRIC PROPERTIES; ELECTRON BEAMS; EPITAXIAL GROWTH; HYDRIDES; IMAGING TECHNIQUES; SPECTRUM ANALYSIS; SUBSTRATES; VAPOR PHASE EPITAXY;

GALLIUM NITRIDE;

EID: 33645544635     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.2184322     Document Type: Article

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