First principles calculations of dopant solubility based on strain compensation and direct binding between dopants and group IV impurities

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 24, Issue 2, 2006, Pages 700-704

  Ahn, Chihak ^a   Diebel, Milan ^a   Dunham, Scott T ^b  

^a UNIVERSITY OF WASHINGTON   (United States)

^b University of Washington   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

FIRST PRINCIPLES CALCULATIONS; GROUP IV IMPURITIES; STRAIN COMPENSATION; VEGARD'S LAW;

BORON; CRYSTAL IMPURITIES; EPITAXIAL GROWTH; NANOSTRUCTURED MATERIALS; SEGREGATION (METALLOGRAPHY); SILICON ALLOYS; SOLUBILITY;

SEMICONDUCTOR DOPING;

EID: 33645538006     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.2179458     Document Type: Article

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