Coherent and sequential tunneling mechanisms for field electron emission through layers of wide band gap materials

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 24, Issue 2, 2006, Pages 881-886

  Filip, V ^a   Nicolaescu, D ^b   Wong, H ^c  

^a UNIVERSITY OF BUCHAREST   (Romania)

^b KYOTO UNIVERSITY   (Japan)

^c CITY UNIVERSITY OF HONG KONG   (Hong Kong)

Author keywords

[No Author keywords available]

Indexed keywords

DIELECTRIC PROPERTIES; ELECTRON TUNNELING; ENERGY GAP; MATHEMATICAL MODELS;

ELECTRON HEATING EFFECTS; SEMICONDUCTOR CATHODES; TUNNELING MECHANISMS;

ELECTRON EMISSION;

EID: 33645525950     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.2180264     Document Type: Article

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