Highly aligned organic semiconductor thin films grown by hot wall epitaxy

Molecular Crystals and Liquid Crystals

Volumn 385, Issue 1, 2002, Pages 61-70

  Andreev, A ^a   Sitter, H ^a   Resel, R ^b   Smilgies, D M ^c   Hoppe, H ^d   Matt, G ^d   Sariciftci, N S ^d   Meissner, D ^d   Lysacek, D ^e   Valek, L ^e  

^a University of Linz   (Austria)

^b GRAZ UNIVERSITY OF TECHNOLOGY   (Austria)

^c Department of Obstetrics Gynecology   (United States)

^d JOHANNES KEPLER UNIVERSITY LINZ   (Austria)

^e BRNO UNIVERSITY OF TECHNOLOGY   (Czech Republic)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC FORCE MICROSCOPY; SYNCHROTRON RADIATION; THIN FILMS; X RAY DIFFRACTION;

ATOMIC-FORCE-MICROSCOPY; DEPOSITION TIME; EARLY GROWTH; GROWTH STAGES; HOTWALL EPITAXY; ORGANIC SEMICONDUCTOR THIN FILMS; PARA-SEXIPHENYL; SELF ORGANIZATIONS; SUBSTRATE DEPOSITION; SUBSTRATES TEMPERATURE;

MICA;

EID: 33645513319     PISSN: 15421406     EISSN: 15635287     Source Type: Journal    
DOI: 10.1080/713738789     Document Type: Article

References (0)