Enhanced retention properties of Pb(Zr,Ti)O3 thin film by applying PbTiO3 seed layer

Integrated Ferroelectrics

Volumn 75, Issue , 2005, Pages 235-241

  Bae, B J ^a   Lim, J E ^a   Yoo, D C ^a   Nam, S D ^a   Heo, J E ^a   Im, D H ^a   Cho, B O ^a   Park, S O ^a   Kim, H S ^a   Chung, U I ^a   Moon, J T ^a  

^a SAMSUNG Electronics   (South Korea)

Author keywords

FRAM; MOCVD; PbTiO3; PZT; Seed layer

Indexed keywords

CERAMIC CAPACITORS; FERROELECTRIC MATERIALS; LEAD COMPOUNDS; POLYCRYSTALLINE MATERIALS;

FRAM; PBTIO3; PZT; SEED LAYER;

THIN FILMS;

EID: 33645505236     PISSN: 10584587     EISSN: 16078489     Source Type: Conference Proceeding    
DOI: 10.1080/10584580500414564     Document Type: Conference Paper

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