New growth approach of high-quality oxide thin films for future device applications: Independent control of supersaturation and migration

Superconductor Science and Technology

Volumn 19, Issue 5, 2006, Pages

  Endo, K ^a,d   Badica, P ^b,c   Sato, H ^d   Akoh, H ^d  

^a KANAZAWA INSTITUTE OF TECHNOLOGY   (Japan)

^b TOHOKU UNIVERSITY   (Japan)

^c NATIONAL INSTITUTE OF MATERIALS PHYSICS   (Romania)

^d NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

FILM GROWTH; FREE ENERGY; METALLORGANIC CHEMICAL VAPOR DEPOSITION; PRECIPITATION (CHEMICAL); SEMICONDUCTOR JUNCTIONS; SUPERSATURATION;

IMPURITY PHASES; INTRINSIC JOSEPHSON JUNCTIONS (IJJ); OXIDE FILMS; PULSED LASER INTERVAL DEPOSITION;

THIN FILMS;

EID: 33645500064     PISSN: 09532048     EISSN: 13616668     Source Type: Journal    
DOI: 10.1088/0953-2048/19/5/S12     Document Type: Article

References (5)

1. Endo K, Yamasaki H, Misawa S, Yoshida S and Kajimura K 1992 Nature 355 327
2. Endo K, Hayashida S, Ishiai J, Matsuki Y, Ikedo Y, Misawa S and Yoshida S 1990 Japan. J. Appl. Phys. 2 29 L294
3. Endo K, Badica P and Itoh J 2003 Physica C 386 323
4. Sato H, Akoh H, Nishihara K, Aoyagi M and Takada S 1992 Japan. J. Appl. Phys. 2 31 L1044
5. Koster G, Rijnders G J H M, Blank D H A and Rogalla H 1999 Appl. Phys. Lett. 74 3729