Universal time relaxation behavior of the exchange bias in ferromagnetic/antiferromagnetic bilayers

Journal of Applied Physics

Volumn 99, Issue 3, 2006, Pages

  Dho, Joonghoe ^a   Leung, C W ^b   Blamire, M G ^c  

^a Kyungpook National University   (South Korea)

^b HONG KONG POLYTECHNIC UNIVERSITY   (Hong Kong)

^c UNIVERSITY OF CAMBRIDGE   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; ANTIFERROMAGNETISM; EPITAXIAL GROWTH; IRON COMPOUNDS; MATHEMATICAL MODELS; POLYCRYSTALLINE MATERIALS;

ANTIFERROMAGNETIC DOMAIN; FERROMAGNET/ANTIFERROMAGNET BILAYERS; HYSTERESIS LOOP MEASUREMENT;

FERROMAGNETIC MATERIALS;

EID: 33645498726     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2169876     Document Type: Article

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