Aluminum nitride tunnel barrier formation with low-energy nitrogen ion beams

Journal of Materials Research

Volumn 20, Issue 11, 2005, Pages 3047-3053

  Kaul, Anupama B ^a   Kleinsasser, Alan W ^a   Bumble, Bruce ^a   LeDuc, Henry G ^a   Lee, Karen A ^a  

^a CALIFORNIA INSTITUTE OF TECHNOLOGY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; CURRENT DENSITY; ION BEAMS; JOSEPHSON JUNCTION DEVICES; SILICON; SUBSTRATES; THERMODYNAMIC STABILITY;

ALUMINUM NITRIDE TUNNEL BARRIER; LOW-ENERGY NITROGEN ION BEAMS; SILICON-SUBSTRATE; ULTRA-THIN LAYERS;

ALUMINUM NITRIDE;

EID: 33645453188     PISSN: 08842914     EISSN: None     Source Type: Journal    
DOI: 10.1557/JMR.2005.0369     Document Type: Article

References (20)

1. W.M. Yim, E.J. Stofko, P.J. Zanzucchi, J.I. Pankove, M. Ettemberg, and S.L. Gilbert: Epitaxially grown AlN and its optical bandgap. J. Appl. Phys. 44, 292 (1973).
2. J. Kawamura, D. Miller, J. Chen, J. Zmuidzinas, B. Bumble, H.G. LeDuc, and J. Stern: Very higher-current density Nb/AlN.Nb tunnel junctions for low-noise submillimeter mixers. Appl. Phys. Lett. 76, 2119 (2000).
3. x/Nb 200-300 GHz SIS mixers formed on SOI. J. Vac. Sci. Technol. B 22, 2417 (2004).
4. P.N. Dmitriev, I.L. Lapitskaya, L.V. Filippenko, A.B. Ermakov, S.V. Shitov, G.V. Prokopenko, S.A. Kovtonyuk, and V.P. Koshelets: High quality Nb-based tunnel junctions for high frequency and digital applications. IEEE Trans. Appl. Supercond. 13, 107 (2002).
5. Z. Wang, A. Kawakami, Y. Uzawa, and B. Komiyama: NbN/AlN/NbN tunnel junctions fabricated at ambient substrate temperature. IEEE Trans. Appl. Supercond. 5, 2322 (1995).
6. x barrier made by plasma nitridation. Appl. Phys. Lett. 61, 1228 (1992).
7. A.W. Kleinsasser, W.H. Mallison, and R.E. Miller: Nb/AlN/Nb Josephson junctions with high critical current density. IEEE Trans. Appl. Supercond. 5, 2318 (1995).
8. B. Bumble, H.G. LeDuc, J.A. Stern, and K.G. Megerian: Fabrication of Nb/ AlNx/NbTiN junctions for SIS mixer applications. IEEE Trans. Appl. Supercond. 11, 76 (2001).
9. nA values for SIS mixers. IEEE Trans. Appl. Supercond. 13, 127 (2003).
10. + ion beams. J. Chem. Phys. 97, 2742 (1992).
11. H.D. Hagstrum: in Electron and Ion Spectroscopy of Solids, edited by L. Fiermans, J. Vennik, and W. Dekeyser (Plenum, New York, 1978), p. 273.
12. + beams in the low kinetic energy-near threshold region. J. Chem. Phys. 76, 6417 (1982).
13. J. Stern, B. Bumble, H.G. LeDuc, J.W. Kooi, and J. Zmuidzinas: Fabrication and dc characterization of mixers for use between 600 and 1200 GHz, in Proc. of the Ninth Intl. Symp. on Space THz Tech., Pasadena, CA, March 17-19, 305, 1998.
14. W. Kleinsasser: Influence of beam energy, flux and composition on junction parameters in ion beam tunnel barrier processing. IEEE Trans. Mag. 21, 130 (1985).
15. A.W. Kleinsasser and R.A. Buhrman: High quality submicron niobium tunnel junctions with reactive ion-beam oxidation. Appl. Phys. Lett. 37, 841 (1980).
16. M. Petravic and P.N.K. Deenapanray: Electrical transients in the ion-beam-induced nitridation of silicon. Appl. Phys. Lett. 78, 3445 (2001).
17. J.H. Greiner: Josephson tunneling barriers by rf sputter etching in an oxygen plasma. J. Appl. Phys. 42, 5151 (1971).
18. A copy can be obtained at http://www.srim.org/
19. G. Carter and D.G. Armour: The interaction of low energy ion beams with surfaces. Thin Solid Films 80, 13 (1981).
20. L.A. DeLouise and N. Winograd: Adsorption and desorption of NO from RH(111) and RH(331) surfaces. Surf. Sci. 159, 199 (1985).