Drastic reduction of shot noise in semiconductor superlattices

Physical Review Letters

Volumn 96, Issue 12, 2006, Pages

  Song, W ^a,b   Newaz, A K M ^a   Son, J K ^a,c   Mendez, E E ^a  

^a STONY BROOK UNIVERSITY   (United States)

^b Korea Research Institute of Standards and Science   (South Korea)

^c Samsung Advanced Institute of Technology (SAIT)   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

ONE-DIMENSIONAL MULTIBARRIER STRUCTURES; POISSONIAN NOISE; SUPERLATTICE PARAMETERS; TUNNELING CURRENT;

ELECTRIC FIELDS; ELECTRON TUNNELING; MAGNETIC COUPLINGS; SEMICONDUCTOR DOPING; SEMICONDUCTOR QUANTUM WELLS; SHOT NOISE;

SEMICONDUCTOR SUPERLATTICES;

EID: 33645312356     PISSN: 00319007     EISSN: 10797114     Source Type: Journal    
DOI: 10.1103/PhysRevLett.96.126803     Document Type: Article

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