High-peak-power pulsed operation of 2.0 μm (AlGaln)(AsSb) quantum-well ridge waveguide diode lasers

Journal of Applied Physics

Volumn 99, Issue 5, 2006, Pages

  Eichhorn, M ^a   Rattunde, M ^b   Schmitz, J ^b   Kaufel, G ^b   Wagner, J ^b  

^a FRENCH GERMAN RESEARCH INSTITUTE OF SAINT LOUIS   (France)

^b FRAUNHOFER INSTITUTE FOR APPLIED SOLID STATE PHYSICS IAF   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT DENSITY; LASER PULSES; QUANTUM WELL LASERS; SEMICONDUCTING GALLIUM COMPOUNDS;

NEAR-FIELD DISTRIBUTION; OPTICAL DAMAGE; PULSE CURRENTS; RIDGE WAVEGUIDE;

OPTICAL WAVEGUIDES;

EID: 33645232384     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2179121     Document Type: Article

References (5)

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2. J. Wagner, E. Geerlings, G. Kaufel, M. Kelemen, C. Manz, C. Pfahler, M. Rattunde, and M. Schmitz, Proc. SPIE 5732, 152 (2005).
3. G. Turner and H. Choi, Optoelectronic Properties of Semiconductors and Superlattices, edited by M. O. Manasreh (Gordon and Breach, Amsterdam, 1997), pp. 369-431.
4. M. Rattunde, J. Schmitz, R. Kiefer, and J. Wagner, Appl. Phys. Lett. 84, 4750 (2004).
5. M. Eichhorn, Opt. Lett. 30, 456 (2005).