Effect of oxidation on the electronic structure of a Si29 quantum dot: Calculations of redshifts in energy gap

Journal of Applied Physics

Volumn 99, Issue 5, 2006, Pages

  Nishida, Masahiko ^a  

^a KANAZAWA INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ENERGY GAP; OXIDATION; PHOTOLUMINESCENCE; PHOTONS; SEMICONDUCTOR QUANTUM DOTS; SPECTRUM ANALYSIS;

NONORTHOGONAL TIGHT BINDING METHOD; PHOTOLUMINESCENCE SPECTRA; PHOTON ENERGY; REDSHIFTS;

ELECTRONIC STRUCTURE;

EID: 33645229664     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2177381     Document Type: Article

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