Piezoresistive pressure sensing by porous silicon membrane

IEEE Sensors Journal

Volumn 6, Issue 2, 2006, Pages 301-309

  Pramanik, Chirasree ^a   Saha, Hiranmay ^a,b  

^a JADAVPUR UNIVERSITY   (India)

^b IC Design and Fabrication Center   (India)

Author keywords

Piezoresistive pressure sensing; Porous silicon membrane; Quantum confinement

Indexed keywords

PIEZORESISTIVE PRESSURE SENSING; POROUS SILICON MEMBRANE; QUANTUM CONFINEMENT;

CRYSTALLINE MATERIALS; ENERGY DISSIPATION; NANOSTRUCTURED MATERIALS; SENSORS;

POROUS SILICON;

EID: 33645225941     PISSN: 1530437X     EISSN: None     Source Type: Journal    
DOI: 10.1109/JSEN.2006.870171     Document Type: Article

References (47)

1. L. T. Canham, "Silicon quantum wire array fabrication by electrochemical and chemical dissolution of wafers," Appl. Phys. Lett., vol. 57, p. 1046, 1990.
2. P. M. Fauchet, J. von Behren, K. D. Hirschman, L. Tsybeskov, and S. P. Duttagupta, "Porous silicon physics and device applications: A status report," Phys. Stat. Sol. A, vol. 165, p. 3, 1998.
3. R. C. Anderson, R. S. Muller, and C. W. Tobias, "Investigations of porous silicon for vapor sensing," Sens. Actuators A, vol. 21-23, pp. 835-839, 1990.
4. J. Das, S. M. Hossain, S. Chakraborty, and H. Saha, "Role of parasitics in humidity sensing by porous silicon," Sens. Actuators A, vol. 94, pp. 44-52, 2001.
5. J. Das, S. Dey, S. M. Hossain, Z. M. C. Rittersma, and H. Saha, "A hygrometer comprising a porous silicon humidity sensor with phase detection electronics," IEEE Sensors J., vol. 3, no. 3, pp. 414-420, Aug. 2003.
6. G. M. O'Halloran, M. Kuhl, P. J. trimp, and P. J. French, "The effect of additives on the adsorption properties of porous silicon," Sens. Actuators A, vol. 61, pp. 415-420, 1997.
7. G. M. O'Halloran, P. M. Sarro, J. Groeneweg, P. J. trimp, and P. J. French, "A bulk micromachined humidity sesnosr based on porous silicon," in Proc. Transducers, Chicago, IL, 1997, pp. 563-566.
8. Z. M. Rittersma, W. J. Zaagman, M. Zetstra, and W. Benecke, "A monitoring instrument with capacitive porous silicon humidity sensors," Smart Mater. Struct., vol. 9, pp. 351-356, 2000.
9. T. E. Bell, P. T. J. Genissen, D. DeMunter, and M. Kuhl, "Porous silicon as a sacrificial material," J. Micromech. Microeng., vol. 6, pp. 361-369, 1996.
10. H. Artmann, F. Schaefer, G. Lammel, S. Armbruster, H. Benzel, C. Schelling, H. Weber, HG. Vossenberg, R. Gampp, J. Muchow, F. Laermer, and S. Finkbeiner, "Monocrystalline Si membranes for pressure sensors fabricated by a novel surface micromachining process using porous silicon," in Proc. SPIE, vol. 4981, 2003, pp. 65-70.
11. D. Dominguez, B. Bonvalot, M. T. Chau, and J. Suski, "Fabrication and characterization of a thermal flow sensor based on porous silicon technology," J. Micromech. Microeng., vol. 3, pp. 247-249, 1993.
12. I. Kleps, A. Angelescu, N. Samfirescu, A. Gil, and A. Correia, "Study of porous silicon, silicon carbide and DLC coated field emitters for pressure sensor application," Solid-State Electron., vol. 45, pp. 997-1001, 2001.
13. J. M. Ryan, P. R. Wamsley, and K. L. Bray, "Pressure induced phase transition in porous silicon," Appl. Phys. Lett., vol. 63, no. 16, pp. 2260-2262, 1993.
14. J. T. Martinez, Y. G. Rubo, M. Cruz, M. R. Beltran, and C. Wang, "Tight binding description of disordered nanostructures: An application to porous silicon," Appl. Surf. Sci., vol. 142, p. 564, 1999.
15. H. Saha, S. M. Hossain, and J. Das, "Porous silcion:A natural nanostructure for sensing and photonuic application," Ind. J. Phys. A, vol. 78, no. 1, pp. 19-25, 2004.
16. H. Saha, J. Das, and S. M. Hossain, "Porous silicon: A natural nanostructure for vapor sening application," Asian J. Phys., vol. 12, pp. 323-330, 2003.
17. T. Toriyama and S. Sugiyama, "Single crystal silicon piezoresistive nanowire bridge," Sens. Actuators A, vol. 108, pp. 244-249, 2003.
18. K. L. Kolokolov, A. M. Savin, S. D. Benrslavski, N. Y. Minima, and O. P. Hansen, "Energy spectrum and topology evolution of the fermi surface of two dimensional holes in GaAs/A10.5 Ga0.5 As heterostrucures under uniaxial compression: Theory and experiment," Phys. Rev. B., vol. 59, pp. 7537-7545, 1999.
19. J. L. Robert, F. Bosc, J. Sicart, V. Mosser, and J. Lasseur, "Pressure sensors based on silicon doped GaAs-AlAs superlattices," J. Appl. Phys., vol. 87, pp. 2941-2946, 2000.
20. "Elastic properties of porous silicon," Properties Porous Silicon, p. 127, 1997.
21. C. Populaire, B. Remaki, V. Lysenko, D. Barbier, H. Artmann, and T. Pannek, "On mechanical properties of nanostructured meso-porous silicon," Appl. Phys. Lett., vol. 83, pp. 1370-1372, 2003.
22. S. K. Dutta, S. M. Hossain, S. Chakraborty, and H. Saha, "Conductivity modulation of porous silicon by formation parameters," Phys. Stat. Solidi A, vol. 191, pp. 535-547, 2002.
23. D. Crouse, Y.-H. Lo, A. E. Miller, and M. Crouse, "Self ordered pore structure of anodizerd aluminum on silicon and pattern transfer," Appl. Phys. Lett., vol. 76, no. 1, pp. 49-51, 2000.
24. C. S. Solanki, R. R. Bilyalov, H. Bender, and J. Poortmans, "New approach for the formation and separation of a thin porous silicon layer," Phys. Stat. Sol. A, vol. 182, pp. 97-101, 2000.
25. D. S. McLachlan, "A new interpretation of percolation conductivity results with large critical regimes," Solid State Commun., vol. 60, pp. 821-825, 1986.
26. _, "Equations for the conductivity of macroscopic mixtures," J. Phys. C: Solid State Phys., vol. 19, pp. 1339-1354, 1986.
27. _, "The complex permittivity of emulsions," Solid State Commun., vol. 72, pp. 831-834, 1989.
28. G. E. Picus and G..L. Bir, Symmetry and Strain Induced Effects in Semiconductors. New York: Wiley, 1974.
29. O. P. Hansen, W. Kraak, N. Minima, J. S. Oslen, B. Saffian, and A. M. Savin, "Spin splitting in a 2D hole system under uniaxial compression," Phys. Stat. Solidi B, vol. 198, p. 295, 1996.
30. J. M. Lauerhaas, G. M. Credo, J. L. Heinrich, and M. J. Sailor, "Reversible luminescence quenching of porous Si by solvents," J. Amer. Chem. Soc., vol. 114, pp. 1911-1912, 1992.
31. G. M. O'Halloran, J. Groeneweg, P. M. Sarro, and P. J. French, "Porous silicon membrane for humidity sensing applications," in Proc. Eurosensors, Sep. 13-16, 1998, pp. 901-904.
32. I. Schechter, M. Ben-Chorin, and A. Kux, "Gas sensing properties of porous silicon," Anal. Chem., vol. 67, pp. 3727-3732, 1995.
33. Z. M. Rittersma and W. Benecke, "A humidity sensor featuring a porous silicon capacitor with an integrated refresh resistor," Sens. Mater., vol. 12, pp. 35-55, 2000.
34. C. Pramanik, U. Gangopadhyay, and H. Saha, "An integrated pressure and temperature sensor based on porous silicon," presented at the IEEE Sensors Conf., 2004.
35. M. J. Declercq, L. Gerzberg, and J. D. Meindl, "Optimization of the hydrazine water solution for anisotropic etching of silicon in integrated circuit technology," J. Electrochem. Soc., vol. 122, p. 545, 1975.
36. S. M. Hossain, J. Das, S. Chakraborty, S. K. Dutta, and H. Saha, "Electrode design and planar uniformity of anodically etched large area porous silicon," Semicond. Sci. Technol., vol. 17, pp. 55-59, 2002.
37. S. M. Hossain, S. Chakraborty, S. K. Dutta, J. Das, and H. Saha, "Stability in photoluminescence of porous silicon," J. Luminesc., vol. 91, pp. 195-202, 2000.
38. L. A. Balagurov, S. C. Bayliss, V. S. Kasatochkin, E. A. Petrova, B. Unal, and D. G. Yarkin, "Transport of carriers in metal/porous silicon/c-Si device structures based on oxidized porous silicon," J. Appl. Phys., vol. 90, pp. 1-6, 2001.
39. M. Ben-Chorin, F. Moller, and F. Koch, "Band alignment and carrier injection at the porous silicon-silicon-crystalline silicon interface," J. Appl. Phys., vol. 77, p. 4482, 1995.
40. _, "Nonlinear electrical transport in porous silicon," Phys. Rev.B, vol. 49, pp. 2981-2984, 1994.
41. Motorola Sensor Device Data-MPX12/D Series.
42. S. Tankiewiez et al., "New thick film material for piezoresistive sensors," Sens. Actuators A, vol. 95, pp. 39-45, 2001.
43. A. Henry, P. kamlesh, M. Jeff, F. Brian, and K. Jim, "Amplified very-low pressure (less than 50 kPa) piezoresistive sensors," presented at the Sensors Conf., 2002.
44. O. N. Tufte, P. W. Chapman, and D. Long, "Silicon diffused element piezoresistive diaphragms," J. Appl. Phys., vol. 33, pp. 3322-3327, 1962.
45. T. Toriyama, Y. tanomoto, and S. Sugiyama, "Single crystal silicon nanowirtes piezoresistors for mechanical sensors," IEEE J. Microelectromech. Syst., vol. 11, no. 5, pp. 605-611, May 2002.
46. Intersema (0-10 kPa) Sensor Device Data-MS73IOD Series.
47. Honeywell Sensor Device Data-26PCOISMT. Series.