Uranium passivation by C+ implantation: A photoemission and secondary ion mass spectrometry study

Surface Science

Volumn 600, Issue 6, 2006, Pages 1319-1325

  Nelson, A J ^a   Felter, T E ^a   Wu, K J ^a   Evans, C ^a   Ferreira, J L ^a   Siekhaus, W J ^a   McLean, W ^a  

^a LAWRENCE LIVERMORE NATIONAL LABORATORY   (United States)

Author keywords

Ion implantation; Time of flight secondary ion mass spectrometry (ToF SIMS); Uranium; Uranium carbide; X ray photoelectron spectroscopy (XPS)

Indexed keywords

AIR; CARBON; ELECTRONIC STRUCTURE; ION IMPLANTATION; OXIDATION; PASSIVATION; POLYCRYSTALLINE MATERIALS; SECONDARY ION MASS SPECTROMETRY; URANIUM CARBIDE; X RAY PHOTOELECTRON SPECTROSCOPY;

AIR OXIDATION; SURFACE LAYERS; TIME-OF-FLIGHT SECONDARY ION MASS SPECTROMETRY (TOF-SIMS);

URANIUM;

EID: 33645001140     PISSN: 00396028     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.susc.2006.01.025     Document Type: Article

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