Comparison of performance of n- and p-Type spin transistors with conventional transistors

Journal of Superconductivity and Novel Magnetism

Volumn 18, Issue 3, 2005, Pages 349-356

  Gvozdic D M ^a   Ekenberg, U ^a   Thylen L ^a  

^a ROYAL INSTITUTE OF TECHNOLOGY   (Sweden)

Author keywords

Hole subband; Quantum well; Spin splitting; Spintronics; Transistor

Indexed keywords

ELECTRIC FIELDS; ELECTRIC POTENTIAL; ELECTRONS; OPTIMIZATION; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR QUANTUM WELLS;

ELECTRON-BASED SPIN TRANSISTORS; HOLE SUBBAND; RASHBA EFFECT; SPIN SPLITTING; SPIN TRANSISTORS; SPINTRONICS;

TRANSISTORS;

EID: 33645000865     PISSN: 15571939     EISSN: 15571947     Source Type: Journal    
DOI: 10.1007/sl0948-005-0009-y     Document Type: Article

References (31)

1. D. D. Awschalom, M. E. Flatté, and N. Samarth, Sci. Am. June 2002, p. 52.
2. I. Zutic, J. Fabian, and S. Das Sarma, Rev. Mod. Phys. 76, 323 (2004).
3. S. Datta and B. Das, Appl. Phys. Leu. 56, 665 (1990).
4. Y. A. Bychkov and E. I. Rashba, J. Phys. C 17, 6039 (1984).
5. R. Winkler, Springer Tracts in Modern Physics, Vol. 191 (Springer, Berlin, 2003).
6. R. Winkler, Phys. Rev. B 62, 4245 (2000).
7. M. Cardona, N. E. Christensen, and G. Fasol, Phys. Rev. Lett. 56, 2831 (1986).
8. International Technology Roadmap for Semiconductors (ITRS) (2003). available at http://public.itrs.net/Files/ 2003ITRS/Home2003.htm.
9. E. A. de Andrada e Suva, G. C. LaRocca, and F. Bassani, Phys. Rev. B 55, 1au293 (1997).
10. O. Mauritz and U. Ekenberg, Phys. Rev. B 55, 10729 (1997).
11. U.M. Ida, K. Kurishima, and N. Watanabe, IEEE Electron Dev. Lett. 23, 694 (2002).
12. R. Fiederling, M. Keim, G. Reuscher, W. Ossau, G. Schmidt, A. Waag, and L. W. Molenkamp, Nature 402, 787 (1999).
13. T. Dietl, H. Ohno, F. Matsukura, J. Cibert, and D. Ferrand, Science 287, 1019(2000).
14. S. J. Pearton, C. R. Abernathy, D. P. Norton, A. F. Hebard, Y. D. Park, L. A. Boatner, and J. D. Budai,Mater Sci. Eng. R40, 137 (2003); especially Table 1.
15. D. Grundler, Phys. Rev. Lett. 84, 6074 (2000).
16. A. M. Cohen and G. E. Marques, Phys. Rev. B 41, 10608 (1990).
17. M. G. Burt J.. Phys. Condens. Matter 4, 6651 (1992).
18. B. A. Foreman, Phys. Rev. B 48, 4964 (1993).
19. R. Winkler and U. Rössler, Phys. Rev. B 48, 8918 (1993).
20. G. Dresselhaus, Phys. Rev. 100, 580 (1955).
21. M. Silver, W. Batty, A. Ghiti, and E. P. O'Reilly, Phys. Rev. B 46, 6781 (1992).
22. S. J. Papadakis, E. P. De Poortere, H. C. Manoharan, M. Shayegan, and R. Winkler, Science 283, 2056 (1999).
23. R. Winkler, Phys. Rev. B 69, 045317 (2004).
24. R. Mattana, J.-M. George, H. Jaffrès, F. Nguyen Van Dau, A. Fert, B. Lépine, A. Guivarc'h, and G. Jézéquel,Phys. Rev. Lett. 90, 166601 (2003).
25. S. Murakami, N. Nagaosa, and S.-C. Zhang, Science 301, 1348 (2003).
26. Y. Ohno, D. K. Young, B. Beschoten, F. Matsukura, H. Ohno, and D. D. Awschalom, Nature 402,790 (1999).
27. E. I. Rashba, Phys. Rev. B 62, R16267 (2000).
28. K. C. Hall, W. H. Lau, K. Gündogdu, M. E. Flatté, and T. F. Boggess, Appl. Phys. Lett. 83, 2937 (2003).
29. J. Nitta, T. Akazaki, H. Takayanagi, and T. Enoki, Phys. Rev. Lett. 78, 1335 (1997).
30. B. Jusserand, D. Richards, G. Allan, C. Priester, and B. Etienne, Phys. Rev. B 51, 4707 (1995).
31. D. Richards, B. Jusserand, G. Allan, C. Priester, and B. Etienne, Solid-State Electronics 40, 127 (1996).