PECVD Low-k (∼2.7) dielectric SiCOH film development and integration for 65 nm CMOS devices

Advanced Metallization Conference (AMC)

Volumn , Issue , 2006, Pages 89-95

  Ida, K ^a   Nguyen, S ^b   Lane, S ^c   Klymko, N ^c   Chanda, K ^c   Chen, F ^c   Christiansen, C ^c   Cohen, S ^b   Cullinan, M ^c   Dziobkowski, C ^c   Flaitz, P ^c   Fitzsimmons, J ^c   Fukasawa, M ^a   Gill, J ^c   Grill, A ^b   Inoue, K ^a   Kumar, K ^c   Labelle, C ^e   Lane, M ^b   Liniger, E ^b   Madon, A ^c   Malone, K ^c   Martin, J ^e   McGahay, V ^c   Minami, M ^a   Molis, S ^c   Restaino, D ^c   Sakamoto, A ^a   Sankar, M ^b   Sherwood, M ^b   Simonyi, E ^b   Shimooka, Y ^d   Tai, L ^c   Widodo, J ^f   Wildman, H ^c   Ono, M ^d   McHerron, D ^c   Nye, H ^c   Edelstein, ^b   Nogami, T ^a   Ivers, T ^c   more..

^a SONY CORPORATION   (Japan)

^b IBM T J WATSON RESEARCH CENTER   (United States)

^c IBM MICROELECTRONICS   (United States)

^d Toshiba America Inc   (United States)

^e ADVANCED MICRO DEVICES   (United States)

^f CHARTERED SEMICONDUCTOR MANUFACTURING LTD   (Singapore)

Author keywords

[No Author keywords available]

Indexed keywords

CROSS-LINKED BONDING; SICOH FILM; ULSI CHIP; FILM PROPERTIES; FILM STRUCTURE ANALYSIS; PROCESS INTEGRATION SCHEME;

CMOS INTEGRATED CIRCUITS; CROSSLINKING; PERMITTIVITY; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; SILICON COMPOUNDS; ULSI CIRCUITS; CRACK INITIATION; OPTIMIZATION; SILICON; STRENGTH OF MATERIALS; THIN FILMS;

DIELECTRIC FILMS; DIELECTRIC DEVICES;

EID: 33644957436     PISSN: 15401766     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (13)

1. D. Edelstein, et al., Digest of IEEE IPRS 2004, p. 18.
2. A. Grill, et al., Proceedings of IITC 2004, p. 54
3. D. Edelstein, et al., Proceedings of IITC 2004, p. 214
4. M. Fukasawa, et al., Proceedings of IITC 2005
5. W. Chang, et al., Digest IEEE IEDM 2001, p. 643.
6. S. Thompson, et al, Digest IEEE IEDM 2002, p. 61.
7. K. Yu, et al., Proc. IEEE IITC 2002, p. 9.
8. K. Higashi, et al., Proc. IEEE IITC 2002, p. 15.
9. M. Matsuura et al., Advanced Metallization Conference 2002, p. 493.
10. G. Horner et al., Yield Management Solution, August 1999, p.26.
11. P. J. Launer, "Infrared analysis of organosilicon compounds: spectra-structure correlations", in Silicone Compounds Register and Review, Ed. by B. Arkles, et.al., 1987, p. 100.
12. A. Grill and D. A, Neumayer, J. Apply. Phys., 2003, p. 6697.
13. Nancy Klymko, Future Fab International Issue 17, July, 2004, p. 135-138.