Comparison of barrier-first and argon pre-clean first processes for copper metallization in ultra low-k (ULK) dual damascene integration

Advanced Metallization Conference (AMC)

Volumn , Issue , 2006, Pages 413-419

  Arunachalam, Valli ^a   Smith, Gregory C ^b   Kailasam, Sridhar ^c   Knorr, Andreas ^b   Hettiaratchi, Kam ^d   Rozbicki, Robert T ^c   Pfeifer, Klaus ^b   Ho, Paul ^e   Pyun, Jung Woo ^e  

^a TEXAS INSTRUMENTS   (United States)

^b SEMATECH   (United States)

^c NOVELLUS SYSTEMS INC   (United States)

^d ATDF   (United States)

^e The University of Texas at Austin   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BARRIER-FIRST PROCESS; DAMASCENE; DAMASCENE METALLIZATION; LOW-K DAMAGE; COPPER METALLIZATION; DUAL DAMASCENE METALLIZATION; RESISTANCE-CAPACITANCE (RC) DELAY; ULTRA LOW-K (ULK) DUAL DAMASCENE INTEGRATION;

DIELECTRIC MATERIALS; ELECTROMIGRATION; METALLIZING; PERMITTIVITY; PHYSICAL VAPOR DEPOSITION; SPUTTERING; CAPACITANCE; COPPER; ELECTRIC RESISTANCE;

COPPER; METALLIZING;

EID: 33644944850     PISSN: 15401766     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (3)

1. G.B. Alers et al., IEEE IITC 2003, p 27-29.
2. J. Noguchi et al., Proc. Int'l Rel. Phys. Symp. 2001, p 355.
3. Ennis T. Ogawa, Ki-Don Lee, Volker A. Blaschke, and Paul S. Ho, "Electromigration Reliability Issues in Dual-Damascene Cu Interconnects," IEEE Trans. Reliability 51, 2002, p. 403-419.