Mechanical-property improvement for PECVD SiOCH film by hydrocarbon substitution effect using molecular modeling

Advanced Metallization Conference (AMC)

Volumn , Issue , 2006, Pages 303-308

  Shinriki, Manabu ^a   Tajima, Nobuo ^b   Hamada, Tomoyuki ^c   Ohno, Takahisa ^b   Kobayashi, Nobuyoshi ^d   Hasaka, Satoshi ^a   Inoue, Minora ^a  

^a TAIYO NIPPON SANSO CORPORATION   (Japan)

^b NATIONAL INSTITUTE FOR MATERIALS SCIENCE   (Japan)

^c INSTITUTE OF INDUSTRIAL SCIENCE   (Japan)

^d SEMICONDUCTOR LEADING EDGE TECHNOLOGIES INC   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

HYDROCARBONS; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; SILANES; SILICON CARBIDE; SUBSTITUTION REACTIONS; SYNTHESIS (CHEMICAL); MATHEMATICAL MODELS; MOLECULAR DYNAMICS; THIN FILMS;

DIISOPROPYLDIMETHOXYSILANE (DIPDMOS); DIMETHYLDIMETHOXYSILANE (DMDMOS); MOLECULAR MODELING; HIGH-PERFORMANCE SILICON DEVICES; SUBSTITUTING ISOPROPYL GROUP;

DIELECTRIC FILMS; SILICON COMPOUNDS;

EID: 33644938862     PISSN: 15401766     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (6)

1. C.-H. Jan et al., Proc. IEEE. IITC., pp. 205-207 (2004).
2. A, S. Lukas et al., U.S. Patent No.0175957 A l (9 September 2004).
3. N. Tajima et al., Proc. IEEE IITC, pp. 66-68 (2005).
4. N. Tajima et al., presented at the SSDM, Kobe, Japan, 2005 (Abstract pp.548-549).
5. Phase: Institute of Industrial Science, University of Tokyo, Tokyo, 2004.
6. A. Grill et al., J.Appl.Phys. 94, No. 10, 6697 (2003).