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Applied Physics Letters
Volumn 58, Issue 12, 1991, Pages 1280-1282
Leakage mechanisms of titanium silicided n+/p junctions fabricated using rapid thermal processing
(6)
Ada Hanifi, M
a
Chantre, A
a
Levy, D
a
Gonchond, J P
a
Delpech, Ph
a
Nouailhat, A
a
a
ORANGE LABS
(
France
)
Author keywords
[No Author keywords available]
Indexed keywords
EID
:
33644897472
PISSN
:
00036951
EISSN
:
None
Source Type
:
Journal
DOI
:
10.1063/1.104336
Document Type
:
Article
Times cited : (
13
)
References (
10
)
1
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6
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6
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5
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1
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2
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(1990)
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, Issue.4
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1
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2
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3
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4
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5
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6
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7
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8
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9
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10
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11
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12
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(1988)
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, vol.53
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1
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2
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(to be published
(1991)
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, vol.69
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1
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2
9
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(1984)
Mater. Res. Soc. Conf. Proc.
, vol.23
, pp. 347
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1
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2
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3
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4
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5
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6
10
0000292241
(1988)
J. Appl. Phys.
, vol.63
, pp. 1990
Liu, R.
1
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2
Lynch, W.T.
3
* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.
