Labeled Weibull plot of a C-derived Si3N4-SiC nanocomposite

Key Engineering Materials

Volumn 290, Issue , 2005, Pages 292-295

  Kasiarova M ^a   Dusza, J ^a   Hnatko, M ^b   Sajgalik P ^b  

^a INSTITUTE OF MATERIALS RESEARCH   (Slovakia)

^b INSTITUTE OF CHEMISTRY   (Slovakia)

Author keywords

Fractography; Si3N4 SiC nanocomposite; Technological defects; Weibull analysis

Indexed keywords

BENDING STRENGTH; FRACTOGRAPHY; FRACTURE MECHANICS; SILICON CARBIDE; SURFACE DEFECTS; WEIBULL DISTRIBUTION;

FRACTURE ORIGINS; TECHNOLOGICAL DEFECTS; WEIBULL ANALYSIS;

NANOCOMPOSITES;

EID: 33644889324     PISSN: 10139826     EISSN: 16629795     Source Type: Book Series    
DOI: 10.4028/0-87849-973-3.292     Document Type: Conference Paper

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