Chemical mechanical polishing (CMP) mechanisms of thermal SiO2 film after high-temperature pad conditioning

Thin Solid Films

Volumn 504, Issue 1-2, 2006, Pages 166-169

  Kim, Nam Hoon ^a   Ko, Pil Ju ^a   Choi, Gwon Woo ^a   Seo, Yong Jin ^b   Lee, Woo Sun ^a  

^a Chosun University   (South Korea)

^b Daebul University   (South Korea)

Author keywords

Chemical mechanical polishing (CMP); Hydro carbonated state; Pad conditioning; Slurry residues

Indexed keywords

CHEMICAL MECHANICAL POLISHING; PARTICLE SIZE ANALYSIS; SILICON COMPOUNDS; SLURRIES; THERMAL EFFECTS;

HYDRO-CARBONATED STATE; PAD CONDITIONING; SLURRY RESIDUES;

THIN FILMS;

EID: 33644880214     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2005.09.089     Document Type: Conference Paper

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