High-performance IR detectors fabricated by PtSi on p-Si substrate

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 3379, Issue , 1998, Pages 333-342

  Wang, Wen Sheng ^a   Ho, Chia ^a   Chuang, Tien Ming ^a  

^a CHUNG SHAN INSTITUTE OF SCIENCE AND TECHNOLOGY   (Taiwan)

Author keywords

Fowler plot; Noise equivalent temperature difference; PtSi Schottky barrier detector; TEM

Indexed keywords

DETECTORS; FOCUSING; HIGH PERFORMANCE LIQUID CHROMATOGRAPHY; INFRARED DETECTORS; MONOLITHIC INTEGRATED CIRCUITS; QUANTUM EFFICIENCY; SCHOTTKY BARRIER DIODES; SEMICONDUCTOR QUANTUM DOTS; SILICON; SUBSTRATES; TRANSMISSION ELECTRON MICROSCOPY;

BACKGROUND LIMITED (BLIP); CURRENT VOLTAGE (I V) CHARACTERISTICS; FORMATION CONDITIONS; FORMATION TEMPERATURE; FOWLER PLOT; HIGH PERFORMANCE; IR DETECTORS; NOISE EQUIVALENT TEMPERATURE DIFFERENCE; PTSI SCHOTTKY-BARRIER DETECTOR; SI SCHOTTKY DIODE; SI(2 1 1) SUBSTRATES; SI(LI) DETECTORS; SUBSTRATE TEMPERATURE (ST); TEM;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 33644697987     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.317600     Document Type: Conference Paper

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