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Volumn 374-375, Issue , 2006, Pages 464-467

ZeroX: A technique for studying weak dipolar relaxations at continuous muon facilities

Author keywords

Ag; Al; GaAs; Integral method; ZeroX

Indexed keywords

ALUMINUM; HIGH ENERGY PHYSICS; NUCLEAR PHYSICS; SEMICONDUCTING GALLIUM ARSENIDE; SILVER;

EID: 33644670777     PISSN: 09214526     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.physb.2005.11.133     Document Type: Conference Paper
Times cited : (5)

References (13)
  • 4
    • 0006731093 scopus 로고
    • Hydrogen in semiconductors
    • J. Pankove N.M. Johnson Academic Press New York
    • R.F. Kiefl, and T.L. Estle Hydrogen in semiconductors J. Pankove N.M. Johnson Semiconductors and Semimetals vol. 34 1990 Academic Press New York 547
    • (1990) Semiconductors and Semimetals , vol.34 , pp. 547
    • Kiefl, R.F.1    Estle, T.L.2
  • 5
    • 77956710831 scopus 로고    scopus 로고
    • Identification of defects in semiconductors
    • M. Stavola Academic Press New York
    • K.H. Chow, B. Hitti, and R.F. Kiefl Identification of defects in semiconductors M. Stavola Semiconductors and Semimetals vol. 51A 1998 Academic Press New York 137
    • (1998) Semiconductors and Semimetals , vol.51 , pp. 137
    • Chow, K.H.1    Hitti, B.2    Kiefl, R.F.3
  • 11
    • 33644671960 scopus 로고    scopus 로고
    • S.P. Cottrell, unpublished ISIS data
    • S.P. Cottrell, unpublished ISIS data.


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.