The behaviors of free electrons and shallow-trapped electrons in sulfur-sensitized silver halide material

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 4922, Issue , 2002, Pages 131-135

  Lu, Xiaodong ^a   Han, Li ^a   Yang, Shaopeng ^a   Li, Xiaowei ^a   Geng, Aicong ^a  

^a HEBEI UNIVERSITY   (China)

Author keywords

Photoelectron; Shallow trapped electron; Sulfur sensitized

Indexed keywords

ABSORPTION SPECTROSCOPY; ELECTRONS; EMULSIFICATION; IMAGING TECHNIQUES; PHOTOELECTRONS; YTTRIUM ALUMINUM GARNET;

DECAY PROCESS; DIELECTRIC SPECTRA; DIFFERENT DENSITIES; FREE ELECTRON; IMAGING PROCESS; MICROWAVE ABSORPTION; PULSEWIDTHS; TRAPPED ELECTRONS;

SILVER HALIDES;

EID: 33644653458     PISSN: 0277786X     EISSN: 1996756X     Source Type: Conference Proceeding    
DOI: 10.1117/12.483128     Document Type: Conference Paper

References (4)

1. Wang Wei, Peng Yanbin, Yu Qing elal. Investigation of sulfur sensitization process photographic materials 4, pp.8-10, 1996.
2. Fu Guangsheng, Yang Shaopeng Li Xiaowei et al. Photoelectrons Decay Kinetics Mechanism of Spectral Sensitization in Silver Halide Emulsion International, Congress of Imaging Science 2002 Tokyo.
3. Yang Shaopeng Fu Guangsheng, Li Xiaowei et al. Influence of Spectral Sensitization on Electron Decay Characteristics in Silver Halide Emulsion, Congress of Imaging Science 2002 Tokyo.
4. Yang Shaopeng Li Xiaowei Han Li Fu Guangsheng Photoelectron Decay characteristic of Silver Halide Microcrystal Illuminated by Short Pulse Laser Chinese Physics Letter 19, pp429, 2002.