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Proceedings of SPIE - The International Society for Optical Engineering

Volumn 5992, Issue 1, 2005, Pages

Template manufacturing for nanoimprint lithography using existing infrastructure

(10) Irmscher, Mathias a Butschke, Joerg a Hess, Guenter b Letzkus, Florian a Renno, Markus b Sailer, Holger a Schulz, Hubert c Schwersenz, Anatol a Thompson, Ecron d Vratzov, Boris e

a Institut fur Mikroelektronik Stuttgart (Germany)

b Schott Lithotec AG (Germany)

c CARL ZEISS SMT AG (Germany)

d MOLECULAR IMPRINTS INC (United States)

e Molecular Imprints GmbH (Germany)

Author keywords

Chemically amplified resist; e beam lithography; Nanoimprint; Template manufacturing

Indexed keywords

ELECTRON BEAMS; ETCHING; NANOTECHNOLOGY; QUARTZ;

CHEMICALLY AMPLIFIED RESIST; NANOIMPRINT; TEMPLATE MANUFACTURING;

ELECTRON BEAM LITHOGRAPHY;

EID: 33644609318 PISSN: 0277786X EISSN: None Source Type: Conference Proceeding
DOI: 10.1117/12.629974 Document Type: Conference Paper

Times cited : (8)

References (6)

1
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- S. Sasaki, K. Itoh, A. Fujii, N. Toyama, H. Mohri, N. Hayashi "Photomask process development for next generation lithography" Photomask Japan 2005, Yokohama, Japan, April 13-15.
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2
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- Tool and process optimization for 100nm maskmaking using a 50kV variable shaped e-beam system
- Monterey, CA, USA, Oct 2-5
- D. Beyer, D. Loffelmacher, G. Goedl, P. Hudek, B. Schnabel, T. Elster, "Tool and process optimization for 100nm maskmaking using a 50kV variable shaped e-beam system", BACUS Conference, Monterey, CA, USA, Oct 2-5, 2001.
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- Beyer, D.¹ Loffelmacher, D.² Goedl, G.³ Hudek, P.⁴ Schnabel, B.⁵ Elster, T.⁶

3
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- 90nm mask making processes using the positive tone chemically amplified resist FEP171
- Monterey, CA, USA, September 9-12
- J. Butschke, D. Beyer, C. Constantine, P. Dress, P. Hudek, M. Irmscher, C. Koepernik, C. Krauss, J. Plumhoff, P. Voehringer "90nm mask making processes using the positive tone chemically amplified resist FEP171", BACUS Conference, Monterey, CA, USA, September 9-12.
- BACUS Conference
- Butschke, J.¹ Beyer, D.² Constantine, C.³ Dress, P.⁴ Hudek, P.⁵ Irmscher, M.⁶ Koepernik, C.⁷ Krauss, C.⁸ Plumhoff, J.⁹ Voehringer, P.¹⁰

4
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- Shaped beam technology for nano-imprint mask lithography
- Dresden, Germany, Januar 12-14
- P. Hudek, D. Beyer, T. Groves, O. Fortagne, W.J. Dauksher, D. Mancini, K. Nordquist, D.J. Resnick "Shaped Beam Technology for Nano-Imprint Mask Lithography", EMC 2004, Dresden, Germany, Januar 12-14.
- EMC 2004
- Hudek, P.¹ Beyer, D.² Groves, T.³ Fortagne, O.⁴ Dauksher, W.J.⁵ Mancini, D.⁶ Nordquist, K.⁷ Resnick, D.J.⁸

5
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- Mask patterning process using the negative tone chemically amplified resist TOK OEBR-CAN024
- Yokohama, Japan
- M. Irmscher, D. Beyer, J. Butschke, P. Hudek, C. Koepernik, J. Plumhoff, E. Rausa, M. Sato, P. Voehringer "Mask patterning process using the negative tone chemically amplified resist TOK OEBR-CAN024", Photomask Japan 2003, Yokohama, Japan,
- Photomask Japan 2003
- Irmscher, M.¹ Beyer, D.² Butschke, J.³ Hudek, P.⁴ Koepernik, C.⁵ Plumhoff, J.⁶ Rausa, E.⁷ Sato, M.⁸ Voehringer, P.⁹

6
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- Electron beam direct write process development for sub 45nm CMOS manufacturing
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- SPIE Microlithography 2005
- Todeschini, J.¹ Pain, L.² Manakli, S.³ Icard, B.⁴ Dejonghe, V.⁵ Minghetti, B.⁶ Jurdit, M.⁷ Henry, D.⁸ Wang, V.⁹

* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.