Predicting wafer-level IP error due to particle-induced EUVL reticle distortion during exposure chucking

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 5992, Issue 2, 2005, Pages

  Ramaswamy, Vasu ^a   Mikkelson, Andrew ^a   Engelstad, Roxann ^a   Lovell, Edward ^a  

^a University of Wisconsin Madison   (United States)

Author keywords

EUV Lithography; FE Analysis; IP Error; Particle Contamination; Reticle Distortion

Indexed keywords

EUV LITHOGRAPHY; IP ERRORS; PARTICLE CONTAMINATION; RETICLE DISTORTION;

CONTAMINATION; ELECTROSTATICS; HIGH ENERGY PHYSICS; IMAGE ANALYSIS; MASKS; ULTRAVIOLET RADIATION;

PHOTOLITHOGRAPHY;

EID: 33644605455     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.631362     Document Type: Conference Paper

References (6)

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2. H. Levinson, Lithography Process Control, SPIE Press, 1999.
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6. R. Tejeda, R.L. Engelstad, E. Lovell, A. Anderson, D. Yang, and K. Blaedel, "Determination of the Plastic Behavior of Low Thermal Expansion Glass at the Nanometer Scale," Proceedings of the Materials Research Society, Vol. 738, pp. 413-418, 2003.