Comparison between two kinds of semiconductor absorbers for mode-locking in Nd:YVO4 laser

Chinese Physics Letters

Volumn 23, Issue 3, 2006, Pages 616-618

  Wang, Cui Luan ^a   Wang, Yong Gang ^a,c   Ma, Xiao Yu ^a   Liu, Yang ^b   Sun, Li Qun ^b   Tian, Qian ^b   Zang, Zhi Gang ^c   Wang, Qin Yue ^c  

^a INSTITUTE OF SEMICONDUCTORS   (China)

^b TSINGHUA UNIVERSITY   (China)

^c TIANJIN UNIVERSITY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

III-V SEMICONDUCTORS; INDIUM ALLOYS; MODE-LOCKED FIBER LASERS; PASSIVE MODE LOCKING; PUMPING (LASER); SEMICONDUCTING GALLIUM; SEMICONDUCTOR ALLOYS; SEMICONDUCTOR LASERS; TEMPERATURE;

AIR INTERFACE; AS-GROWN; DIODE END-PUMPED; INTERFACE RELAXATIONS; LOWS-TEMPERATURES; MODELOCKING; ND:YVO 4 LASERS; PASSIVE MODE-LOCKING; RELAXATION REGION; SEMICONDUCTOR ABSORBERS;

GALLIUM ARSENIDE;

EID: 33644600041     PISSN: 0256307X     EISSN: 17413540     Source Type: Journal    
DOI: 10.1088/0256-307X/23/3/025     Document Type: Article

References (9)

1. Keller U, Miller A B, Boyd G D, Chiu T H, Ferguson J F and Asom M T 1992 Opt. Lett. 17 505
2. Krainer L, Paschotta R, der Au J A, Honninger C, Keller U, Moser M, Kopf D and Weingarten K J 1999 Appl. Phys. B 69 245
3. Spühler G J, Reffert S, Haiml M, Moser M and Keller U 2001 Appl. Phys. Lett. 78 2733
4. Kajara T T and Gaeta A L 1996 Opt. Lett. 21 1244
5. He J L, Fan Y X, Du J, Wang Y G, Liu S, Wang H T, Zhang L H and Hang Y 2004 Opt. Lett. 29 1803
6. Fan Y X, He J L, Wang Y G, Liu S, Wang H T, Ming N B and Ma X Y 2005 Appl. Phys. Lett. 86 101103
7. Jia Y L, Wei Z Y, Zheng J A, Ling W J, Wang Y G, Ma X Y and Zhang Z G 2004 Chin. Phys. Lett. 21 2209
8. Garnache A, Hoogland S, Tropper A C, Sagnes I, Saint-Girons G and Roberts J S 2002 Appl. Phy. Lett. 80 3892
9. Garnache A, Sermage B, Teissier R, Saint-Girons G and Sagnes I 2003 Lasers and Electro-Optics Europe (2003 CLEO/Europe) (22 - 27 June 2003, Munich, Germany) p 169