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Volumn 5986, Issue , 2005, Pages

1550 nm surface normal electroabsorption modulators for free space optical communications

Author keywords

Coupled quantum wells; Electroabsorption modulator; Free space optical communication

Indexed keywords

CHARACTERIZATION; CURRENT VOLTAGE CHARACTERISTICS; FABRICATION; MOLECULAR BEAM EPITAXY; OPTICAL COMMUNICATION; PHOTOLUMINESCENCE; SEMICONDUCTING INDIUM PHOSPHIDE; SEMICONDUCTOR QUANTUM WELLS; SILICON WAFERS; SPACE OPTICS;

EID: 33644558691     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.630395     Document Type: Conference Paper
Times cited : (4)

References (8)
  • 3
    • 2942737439 scopus 로고    scopus 로고
    • Fabry-Perot electroabsorption modulators for high-speed free-space optical communication
    • 2204
    • Qin Wang, Stéphane Junique, Daniel Ågren, Bertrand Noharet and Jan Y. Andersson, "Fabry-Perot electroabsorption modulators for high-speed free-space optical communication," IEEE Photonic Tech Lett., Vol. 16, pp. 1471-1473, 2204.
    • IEEE Photonic Tech Lett. , vol.16 , pp. 1471-1473
    • Wang, Q.1    Junique, S.2    Ågren, D.3    Noharet, B.4    Andersson, J.Y.5
  • 5
    • 0036895395 scopus 로고    scopus 로고
    • 1.55 μm asymmetric fabry-perot modulator (AFPM) for high-speed applications
    • Jian Jang Huang, Theodore Chung, Maytee Lerttamrab, Shun Lien Chuang, Milton Feng: "1.55 μm asymmetric fabry-perot modulator (AFPM) for high-speed applications", IEEE, Photonic Tech Lett., Vol. 14, pp. 1689-1691, 2002.
    • (2002) IEEE, Photonic Tech Lett. , vol.14 , pp. 1689-1691
    • Huang, J.J.1    Chung, T.2    Lerttamrab, M.3    Chuang, S.L.4    Feng, M.5
  • 7
    • 4444353853 scopus 로고    scopus 로고
    • A surface-normal coupled-quantum-well modulator at 1.55 μm
    • T.H. Stievater, W. S. Rabinovich, Peter G. Goetz: "A surface-normal coupled-quantum-well modulator at 1.55 μm", IEEE Photonic Tech Lett., Vol. 16, pp. 2036-2038, 2004.
    • (2004) IEEE Photonic Tech Lett. , vol.16 , pp. 2036-2038
    • Stievater, T.H.1    Rabinovich, W.S.2    Goetz, P.G.3
  • 8
    • 0028729535 scopus 로고
    • InGaAs-InP P-I (MQW)-N surface-normal electroabsorption modulators exhibiting better than 8:1 contrast ratio for 1.55-μm applications grown by gas-source MBE
    • R. N. Pathak, K. W. Goossen, J. E. Cunningham, and W. Y. Jan, "InGaAs-InP P-I (MQW)-N surface-normal electroabsorption modulators exhibiting better than 8:1 contrast ratio for 1.55-μm applications grown by gas-source MBE", IEEE Photonic Tech Lett., Vol. 6, pp. 1439-1441, 1994.
    • (1994) IEEE Photonic Tech Lett. , vol.6 , pp. 1439-1441
    • Pathak, R.N.1    Goossen, K.W.2    Cunningham, J.E.3    Jan, W.Y.4


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.