Insulator-quantum Hall transitions in a two-dimensional electron gas using self-assembled InAs dots

Institute of Physics Conference Series

Volumn 184, Issue , 2005, Pages 197-200

  Kim, Gil Ho ^a   Liang, Chi Te ^b   Hang, D R ^c   Huang, C F ^d   Ritchie, D A ^e  

^a Sungkyunkwan University   (South Korea)

^b NATIONAL TAIWAN UNIVERSITY   (Taiwan)

^c NATIONAL SUN YAT SEN UNIVERSITY   (Taiwan)

^d INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE   (Taiwan)

^e UNIVERSITY OF CAMBRIDGE   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

HALL EFFECT; INSULATING MATERIALS; MAGNETIC FIELDS; SELF ASSEMBLY; SEMICONDUCTOR QUANTUM DOTS;

FILLING FACTORS; GAAS ELECTRON SYSTEM; HIGH-FIELD INSULATORS;

QUANTUM THEORY;

EID: 33644542096     PISSN: 09513248     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

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