The effects of magnetic field on the energy levels of shallow donor impurities in GaAs/AlxGa1-x as quantum dots

Microelectronics Journal

Volumn 36, Issue 3-6, 2005, Pages 244-246

  Osorio F A P ^a,b   Marques, A B A ^a   Machado, P C M ^a   Borges, A N ^a,b  

^a FEDERAL UNIVERSITY OF GOIÁS   (Brazil)

^b PONTIFÍCIA UNIVERSIDADE CATÓLICA DE GOIÁS   (Brazil)

Author keywords

Binding energy; Magnetic field; Quantum dot

Indexed keywords

BINDING ENERGY; ELECTRON ENERGY LEVELS; IMPURITIES; MAGNETIC FIELD EFFECTS; SEMICONDUCTING GALLIUM ARSENIDE;

SHALLOW DONOR IMPURITIES; TRANSITION ENERGY;

SEMICONDUCTOR QUANTUM DOTS;

EID: 33644528748     PISSN: 00262692     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mejo.2005.02.013     Document Type: Conference Paper

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