Raman scattering characterization of ion-beam synthesized Mg2Si, 2: On the orientational growth of Mg2Si phase in (001) and (111) Si substrates

Plasma Processes and Polymers

Volumn 3, Issue 2, 2006, Pages 224-228

  Zlateva, Genoveva ^a   Atanassov, Alexander ^b   Baleva, Mitra ^b   Nicolova, Lora ^c  

^a MEDICAL UNIVERSITY OF SOFIA   (Bulgaria)

^b UNIVERSITY OF SOFIA   (Bulgaria)

^c TECHNICAL UNIVERSITY OF SOFIA   (Bulgaria)

Author keywords

Ion implantation; Light scattering; Mg2Si; Nanocrystalline films; Semiconductors

Indexed keywords

ANNEALING; CRYSTAL GROWTH; CRYSTAL ORIENTATION; ION IMPLANTATION; LIGHT POLARIZATION; LIGHT SCATTERING; NANOSTRUCTURED MATERIALS; RAMAN SCATTERING; TENSORS;

ION BEAM SYNTHESIS; NANOCRYSTALLINE FILMS; ORIENTATIONAL GROWTH;

MAGNESIUM COMPOUNDS;

EID: 33644523379     PISSN: 16128850     EISSN: None     Source Type: Journal    
DOI: 10.1002/ppap.200500158     Document Type: Article

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