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Volumn 71, Issue 18, 1993, Pages 2967-2970

Kinetic mechanism for island shape variations caused by changes in the growth temperature

Author keywords

[No Author keywords available]

Indexed keywords


EID: 3343012527     PISSN: 00319007     EISSN: None     Source Type: Journal    
DOI: 10.1103/PhysRevLett.71.2967     Document Type: Article
Times cited : (98)

References (16)
  • 9
    • 0026220518 scopus 로고
    • Pathways for dimer string growth during Si deposition on Si(100)−2 × 1
    • This question has been posed by Zhang and Metiu who succeeded in providing an answer for Si/Si(100):
    • (1991) Surface Science Letters , vol.255 , pp. L543
    • Zhang, Z.Y.1    Lu, Y.T.2    Metiu, H.3
  • 12
    • 84927829716 scopus 로고    scopus 로고
    • If the edges did not stay straight during the growth, their advancement into the terrace would have to be described by a velocity vector at each point on the edge, making the kinetic model much more complicated.
  • 14
    • 84927829715 scopus 로고    scopus 로고
    • The parameters for Pt have been provided by J. K. Norskov (private communication).
  • 16
    • 84927893970 scopus 로고
    • The KMC procedure is used by many groups simulating crystal growth. The procedure used here is described by
    • (1991) Surf. Sci. , vol.245 , pp. 103
    • Lu, Y.-T.1    Metiu, H.2


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.