Transmission electron microscopy study of SiF+/BF+2 implanted and annealed (100)Si: Amorphization and residual effects

Journal of Applied Physics

Volumn 79, Issue 10, 1996, Pages 7549-7554

  Kim, J H ^a   Lee, J Y ^a   Paik, J C ^b   Kim, H J ^b  

^a Korea Advanced Institute of Science and Technology (KAIST)   (South Korea)

^b Hong Ik University   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 3343011581     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.362410     Document Type: Article

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