Characteristics of Schottky diodes at 10.6 μm

Applied Physics Letters

Volumn 42, Issue 3, 1983, Pages 268-269

  Inoue, N ^a   Harakawa, K ^a   Yasuoka, Y ^a  

^a NATIONAL DEFENSE ACADEMY   (Japan)

Author keywords

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Indexed keywords

EID: 3343002055     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.93910     Document Type: Article

References (9)