Cathodoluminescence study of Si/SiO 2 interface structure

Applied Surface Science

Volumn 234, Issue 1-4, 2004, Pages 214-217

  Zamoryarskaya, M V ^a   Sokolov, V I ^a   Plotnikov, V ^a  

^a IOFFE INSTITUTE   (Russian Federation)

Author keywords

Bulk charge; Density of interface states; Electrical hardness; Local cathodoluminescence; Silicon oxide film

Indexed keywords

CATHODOLUMINESCENCE; CRYSTAL DEFECTS; DENSITY (SPECIFIC GRAVITY); HARDNESS; NANOSTRUCTURED MATERIALS; OXIDATION; SILICA; SPECTRUM ANALYSIS;

BULK CHARGES; ELECTRICAL HARDNESS; INTERFACE STATES;

INTERFACES (MATERIALS);

EID: 3342991756     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.apsusc.2004.05.031     Document Type: Conference Paper

References (6)

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5. C. Diaz-Guerra, J. Piqueras, D.A. Kurdyukov, V.I. Sokolov, M.V. Zamoryanskaya, App. Phys. Lett. (2001) in press.
6. M.V. Zamoryanskaya, V.I. Sokolov, A.A. Sytnikova, Solid State Phenomena 87/88 (2001).