SCOPUS 정보 검색 플랫폼

Volumn 68, Issue 17, 1992, Pages 2636-2639

Direct observation of an increase in buckled dimers on Si(001) at low temperature

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Indexed keywords

EID: 3342985512 PISSN: 00319007 EISSN: None Source Type: Journal
DOI: 10.1103/PhysRevLett.68.2636 Document Type: Article

Times cited : (653)

References (34)

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- Strain propagation could change significantly only if the force constants of the lattice were altered appreciably. This in turn would require that the change in excitation of lattice vibrations be sufficient for anharmonicity to come into play. Our temperature change clearly does not cause a significant change in excitation (the Debye temperature for silicon is 645 K) and the defect-induced strain field may be assumed constant over our temperature range.

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- We cannot prepare a surface which is free of defects. In any case, step edges also cause buckling, so buckle inducing ``defects'' can never be eliminated. The most important point regarding the defect density observed in this work is that it is sufficiently low to allow us to observe that on cooling to 120 K, the number of buckled dimers clearly increases, at the expense of symmetric appearing dimers.

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