Preparation of silicon-based oxide layer on high-crystalline SiC fiber as an interphase in SiC/SiC composites

Journal of Nuclear Materials

Volumn 329-333, Issue 1-3 PART A, 2004, Pages 554-557

  Igawa, N ^a   Taguchi, T ^a   Yamada, R ^a   Ishii, Y ^a   Jitsukawa, S ^a  

^a JAPAN ATOMIC ENERGY AGENCY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CRACKS; CRYSTALLINE MATERIALS; DEGRADATION; DIFFUSION; FRACTURE TOUGHNESS; INTERFACES (MATERIALS); OXIDATION; RADIOACTIVITY; SCANNING ELECTRON MICROSCOPY; SHEAR STRENGTH; SILICON CARBIDE; SOL-GELS; TENSILE STRENGTH; THERMODYNAMIC STABILITY; X RAY DIFFRACTION ANALYSIS;

BORON NITRIDES; OXIDE LAYERS; SILICON CARBIDE FIBERS;

COMPOSITE MATERIALS;

EID: 3342960901     PISSN: 00223115     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jnucmat.2004.04.116     Document Type: Conference Paper

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