Development of a new focused ion beam preparation method of thin film for TEM with FIB a method capable of re-thinning after TEM observation

Nippon Kinzoku Gakkaishi/Journal of the Japan Institute of Metals

Volumn 68, Issue 5, 2004, Pages 293-298

  Suzuki, Toshiaki ^a   Sibata, Masateru ^a   Okunishi, Eiji ^a   Endo, Noriaki ^a   Kuba, Toshiko ^a  

^a JEOL LTD   (Japan)

Author keywords

Focused ion beam system; Interface characterization; Lift out method; Pick up method; Transmission electron microscope

Indexed keywords

FOCUSED ION BEAM (FIB); INTERFACE CHARACTERIZATION; LIFT OUT METHOD; PICK UP METHOD;

INTERFACES (MATERIALS); ION BEAMS; REACTIVE ION ETCHING; SEMICONDUCTOR DEVICES; TRANSMISSION ELECTRON MICROSCOPY;

THIN FILMS;

EID: 3342934128     PISSN: 00214876     EISSN: None     Source Type: Journal    
DOI: 10.2320/jinstmet.68.293     Document Type: Article

References (7)

1. K. Nikawa: J. Vac. Sci. Technol. B9(5), Sep/Oct 1991 Nov/Dec (1991) p. 2556.
2. T. Suzuki, N. Endo, M. Shibata, S. Kamasaki and T. Ichinokawa: J. Vac. Sci. Technol. A22(1), Jan/Feb 2004 p. 49.
3. M. H. F. Overwijk, F. C. van den Heuvel and C. W. Bulle-Lieuwma: J. Vac. Sci. Technol. B11(6) (1993) p.2021.
4. th Colloquium on Analytical Electron Microscopy (in Japanese) (1993) p. 44.
5. T. Suzuki, N. Endo, E. Okunishi and T. Kuba: JEOL News, Vol. 38 No. 2 (2003) 82.
6. K. Tsutsumi, T. Suzuki and Y. Nagasawa: JEOL News Vol. 36E No. 1 (2001) 66.
7. th Colloquium on Analytical Electron Microscopy (in Japanese) (2000) p. 60.