Field emission from semiconductors

Russian Microelectronics

Volumn 26, Issue 2, 1997, Pages 96-101

  Fursei, G N ^a   Baskin, L M ^a  

^a Bonch Bruevich State University of Telecommunications   (Russian Federation)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 3342930717     PISSN: 10637397     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

References (24)

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2. Borzyak, P.G., Yatsenko, A.F., and Miroshnichenko, L.S., Photo-Field-Emission from High-Resistance Silicon and Germanium, Phys. Status Solidi, 1966, vol. 14, p. 403.
3. Fursei, G.N., Sokol'skaya, I.L., and Ivanov, V.G., Field Emission from p-Type Germanium, Phys. Status Solidi, 1967, vol. 19, p. 39.
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5. Fursei, G.N. and Egorov, N.V., Field Emission from p-Type Silicon, Phys. Status Solidi, 1969, vol. 32, p. 23.
6. Sokol'skaya, I.L. and Shcherbakov, G.P., Study of High-Field Effects in Cold Emitters Made of Cadmium Sulfide Crystals, Fiz. Tverd. Tela (St. Petersburg), 1961, vol. 3, p. 167.
7. 3, Radiotekh. Elektron., 1965, vol. 10, p. 491.
8. Neuman, H., Nichtlinear Effecte bei der Feldemission aus halbleitrn, Z. Naturforsch., A: Phys. Sci., 1968, vol. 23, p. 204.
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10. Apker, L. and Taft, E.A., Field Emission from Photoconductors, Phys. Rev., 1952, vol. 88, p. 1037.
11. Fursei, G.N. and Bakhtizin, R.Z., Nonlinear Current-Voltage Characteristics of p-Germanium, Fiz. Tverd. Tela (St. Petersburg), 1969, vol. 11, p. 3672.
12. Shcherbakov, G.P. and Sokol'skaya, I.L., Experimental Study on the Energy Distribution of Cold Electrons from CdS Single Crystals, Fiz. Tverd. Tela (St. Petersburg), 1963, vol. 4, p. 2581.
13. Shepard, W.B., and Peria, W., Observation of Surface-State Emission in the Energy Distribution of Electrons Emitted from (100) Oriented Ge, Surf. Sci., 1973, vol. 38, p. 461.
14. Fursei, G.N., Egorov, N.V., and Manokhin, S.P., Transient Effects in Field Emission from Silicon, Fiz. Tverd. Tela (St. Petersburg), 1972, vol. 14, p. 1686.
15. El'Nimr, M.K., Egorov, N.V., and Fursei, G.N., Study of Transient Processes in Field Emission from Germanium, Fiz. Tverd. Tela (St. Petersburg), 1975, vol. 17, p. 286.
16. Baskin, L.M., Egorov, N.V., Ptitsyn, B.E., and Fursei, G.N., Effect of Deep Traps on the Emissivity of Wide-Gap Semiconductor Cathodes, Pis'ma Zh. Teor. Fiz., 1979, vol. 5, p. 1345.
17. Baskin, L.M. and Fursei, G.N., Decisive Role of Deep Trap States in Initiating Vacuum Breakdown in Presence of Dielectric Insertion, Proc. 13th ISDEIV, Paris, 1988, part 1, p. 132.
18. Rosova, T.T., Ivanov, V.G., and Fursei, G.N., Effect of Strong Electric Field on Adsorption of Oxygen on Germanium, Fiz. Tverd. Tela (St. Petersburg), 1975, vol. 17, p. 64.
19. Ivanov, V.G., Smirnova, T.P., and Fursei, G.N., Threshold Effect of Oxygen Electroadsorption on Single-Crystal Germanium Faces in a Field-Emission Microscope, Poverkhnost, 1986, vol. 12, p. 128.
20. Egorov, N.V., Fursei, G.N., and El'Nimr, M.K., Retention of the Properties of a Semiconductor Field-Emission Cathode, Zh. Tekh. Fiz., 1974, vol. 44, p. 1117.
21. Sokol'skaya, I.L., Ivanov, V.G., and Fursei, G.N., Study of Barium Adsorption on Germanium by Field-Emission Microscopy, Phys. Status Solidi, 1967, vol. 21, p. 789.
22. Baskin, L.M., Lvov, O.I., and Fursei, G.N., General Features of Field Emission from Semiconductors, Phys. Status Solidi B, 1971, vol. 47, p. 49.
23. Baskin, L.M., Lvov, O.I., and Fursei, G.N., On the Theory of Field Emission from p-Type Semiconductors, Phys. Status Solidi A, 1977, vol. 42, p. 757.
24. Baskin, L.M., Doctoral (Phys.-Math.) Dissertation, Tomsk, 1990.