PL and EL features of p-type porous silicon prepared by electrochemical anodic etching

Applied Surface Science

Volumn 234, Issue 1-4, 2004, Pages 256-261

  Kim, D A ^a   Shim, J H ^a   Cho, N H ^a  

^a Inha University   (South Korea)

Author keywords

Electroluminescence; Etching; Nanocrystallite; Photoluminescence; Porous silicon

Indexed keywords

ELECTROLUMINESCENCE; ETCHING; HETEROJUNCTIONS; LIGHT EMITTING DIODES; OPTOELECTRONIC DEVICES; PHOTOLUMINESCENCE; QUANTUM THEORY; SILICON WAFERS; SPECTRUM ANALYSIS; SURFACE PHENOMENA;

ELECTROCHEMICAL ANODIC ETCHING; NANOCRYSTALLITE; QUANTUM CONFINEMENT EFFECTS (QCE); RADIATIVE RECOMBINATION;

POROUS SILICON;

EID: 3342922591     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.apsusc.2004.05.028     Document Type: Conference Paper

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