Growth phases in the formation of semiconducting manganese indium sulphide thin film and their effect on the optical absorption

Physica B: Condensed Matter

Volumn 351, Issue 1-2, 2004, Pages 45-52

  Sharma, R K ^a,b,d   Rastogi, A C ^b,c   Kohli, Sandeep ^e   Kang, Tae Won ^d   Singh, Gurmeet ^a  

^a UNIVERSITY OF DELHI   (India)

^b NATIONAL PHYSICAL LABORATORY   (India)

^c University of Massachusetts   (United States)

^d Dongguk University   (South Korea)

^e Department of Environmental and Radiological Health Sciences   (United States)

Author keywords

MnIn2S4; Spray deposition; Ternary semiconductor

Indexed keywords

ANNEALING; DEPOSITION; FILM GROWTH; LIGHT ABSORPTION; PYROLYSIS; TERNARY SYSTEMS; THIN FILMS; X RAY DIFFRACTION ANALYSIS;

MNIN2S4; SPRAY DEPOSITION; TERNARY SEMICONDUCTORS;

SEMICONDUCTING MANGANESE COMPOUNDS;

EID: 3342917398     PISSN: 09214526     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.physb.2004.05.009     Document Type: Article

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