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Volumn 83, Issue 2, 1997, Pages 159-176

A complete substrate current model for submicrometre and deep submicrometre MOSFETs

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[No Author keywords available]

Indexed keywords


EID: 3342887978     PISSN: 00207217     EISSN: 13623060     Source Type: Journal    
DOI: 10.1080/002072197135490     Document Type: Article
Times cited : (3)

References (20)
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    • Bordelon, T.J.1    Wang, X.-L.2    Maziar, C.M.3    Tasch, A.F.4
  • 3
    • 0024918845 scopus 로고
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    • Chan, T. Y., and Gaw, H., 1989, Performance and hot-carrier reliability of deep-submicrometer CMOS. IEEE International Electron Device Meeting, 71-74.
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    • Chan, T.Y.1    Gaw, H.2
  • 4
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    • Chan, T. Y., Ko, P. K., and Hu, C. H., 1984, A simple method to characterize substrate current in MOSFETs. IEEE Electron Device Letters, 5, 505-507.
    • (1984) IEEE Electron Device Letters , vol.5 , pp. 505-507
    • Chan, T.Y.1    Ko, P.K.2    Hu, C.H.3
  • 6
    • 0029734530 scopus 로고    scopus 로고
    • Modeling of hot-carrier-stressed characteristics of nMOSFETs
    • Chen, Y.-S., Tang, T.-H., and Jang, S.-L., 1996, Modeling of hot-carrier-stressed characteristics of nMOSFETs. Solid-state Electronics, 39, 75-81.
    • (1996) Solid-State Electronics , vol.39 , pp. 75-81
    • Chen, Y.-S.1    Tang, T.-H.2    Jang, S.-L.3
  • 8
    • 0005285877 scopus 로고
    • Comments on ‘Threshold voltage model for deep submicronmeter MOSFETs’
    • INiguez, B., 1995, Comments on ‘Threshold voltage model for deep submicronmeter MOSFETs’. IEEE Transactions on Electron Devices, 42, 1712.
    • (1995) IEEE Transactions on Electron Devices , vol.42 , pp. 1712
    • Iniguez, B.1
  • 9
    • 0039071705 scopus 로고
    • Current-voltage model of short-channel MOSFETs operated in the linear region
    • Jang, S.-L., Hu, M.-C., and Chen, Y.-S., 1995, Current-voltage model of short-channel MOSFETs operated in the linear region. Solid-state Electronics, 38, 1239-1245.
    • (1995) Solid-State Electronics , vol.38 , pp. 1239-1245
    • Jang, S.-L.1    Hu, M.-C.2    Chen, Y.-S.3
  • 13
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    • Physical understanding of low-field carrier mobility in silicon MOS inversion layer
    • Lee, K.-R., Choi, J.-S., Sim, S.-P., and Kim, C.-K., 1991, Physical understanding of low-field carrier mobility in silicon MOS inversion layer. IEEE Transactions on Electron Devices, 38, 1905-1911.
    • (1991) IEEE Transactions on Electron Devices , vol.38 , pp. 1905-1911
    • Lee, K.-R.1    Choi, J.-S.2    Sim, S.-P.3    Kim, C.-K.4
  • 16
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    • A single C infinity-continuous MOSFET model including subthreshold condition
    • McAndrew, C. C., Bhattacharyya, B. K., and Wing, O., 1991, A single C infinity-continuous MOSFET model including subthreshold condition. IEEE Electron Device Letters, 12, 565-567.
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    • McAndrew, C.C.1    Bhattacharyya, B.K.2    Wing, O.3
  • 17
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    • Sim, J.-H., 1995, An analytical deep submicron MOS device model considering velocity overshoot behavior using energy balance equation. IEEE Transactions on Electron Devices, 42, 864.
    • (1995) IEEE Transactions on Electron Devices , vol.42 , pp. 864
    • Sim, J.-H.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.