Methods for calculating SEU rates for bipolar and NMOS circuits

IEEE Transactions on Nuclear Science

Volumn 32, Issue 6, 1985, Pages 4180-4184

  McNulty, P J ^a   Abdel Kader, W G ^a   Bisgrove, J M ^a  

^a CLARKSON UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 33344455245     PISSN: 00189499     EISSN: 15581578     Source Type: Journal    
DOI: 10.1109/TNS.1985.4334090     Document Type: Article

References (13)

1. P.J. McNulty, “’Radiation Effects on Electronic Systems'” in Proceedings of the Air Force Geophyic Laboratory's Workshop on Earth's Radiation Belts: January 26–27. 1981
2. P.J. McNulty, R.C. Wayatt, G.E. Farrell, R.C. Filz, and P.L. Rothwell, “’Pronton Upsets in LSI Memories Flow in Space” in Space Systems and Their Interactions with the Earth's Space. Environment, H.B. Garrett and C.P. Pike Eds. (AIAA, New York, 1980).
3. J.M. Bisgrove and P.J. McNulty, in preparation.
4. D.K. Nichols, W.E. Price, L.S. Smith, and G.A. Soli, unpublished report.
5. J.A. Zoutendyk, C.J. Malone, and L.S. Smith, IEEE Trans. Nucl. Sci, NS-31, 1167 (1984).
6. D.K. Nichols, W.E. Price, C.J. Malone, and L.S. Smith, IEEE Trans. Nucl. Sci., NS-31, 1186 (1984).
7. P.J. McNulty, G.E. Farrell, and W.P. Tucker, IEEE Trans. Nucl. Sci. NS-2a. 4007 (1981).
8. G.E. Farrell and P.J. McNulty, IEEE Trans. Nucl. Sci. NS-29, 2012 (1982).
9. G.E. Farrell, P.J. McNulty and W. Abdel-Kader, IEEE Trans. Nucl. Sci., NS-31, 1073 (1984).
10. G.E. Farraell Ph.D. Thesis, Clarkson University, 1983.
11. S. El-Teleaty, G.E. Farrell, and P.J. McNulty,” Charge-Deposition in Thin Slabs of Silicon Induced by Energetic Protons’”, IEEE Trans. Nucl. Sci. NS-30, 4394 (1983).
12. R.C. Wyatt, P.J. McNulty, P. Toumbas, P.L. Rothwell, and R.C. Filz, ‘’ Soft Errors Induced by Energetic Protons’”, IEEE Trans. Nucl. Sci, NS-26, 4905 (1979).
13. G.S. Guenzer, E.A. Wolickil, and R.G. Allas, IEEE Trans. Nucl. Sci. NS-26, 5048 (1979).